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Discussion :: Electronic Devices and Circuits

  1. Consider the following statements: The function of oxide layer in an IC device is to

    1. mask against diffusion or non implant
    2. insulate the surface electrically
    3. increase the melting point of silicon
    4. produce a chemically stable protective layer
    Of these statements:

    2. A.
    1, 2, 3 are correct
    B.
    1, 3, 4 are correct
    C.
    2, 3, 4 are correct
    D.
    1, 2, 4 are correct

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    Answer : Option D

    Explanation :

    Oxide layer cannot have any effect on melting point of silicon. Moreover before melting silicon breaks down.

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