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Discussion :: Electronic Devices and Circuits

  1. In intrinsic semiconductor at 300 K, the magnitude of free electron concentration in silicon is about

  2. A.
    15 x 104 per cm3
    B.
    5 x 1012 per cm3
    C.
    1.45 x 1010 per cm3
    D.
    1.45 x 106 per cm3

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    Answer : Option C

    Explanation :

    No answer description available for this question.


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