Discussion :: Electronic Devices and Circuits
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EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that
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A.
more number of electron-hole pairs will be generated in silicon than in germanium at room temperature
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B.
less number of electron hole pairs will be generated in silicon than in germanium at room temperature
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C.
equal number of electron-hole pairs will be generated in both at lower temperatures
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D.
equal number of electron-hole pairs will be generated in both at higher temperatures
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Answer : Option B
Explanation :
No answer description available for this question.
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