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  1. At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is

    2. A.
    450 cm2/V-s
    B.
    1350 cm2/V-s
    C.
    1800 cm2/V-s
    D.
    3600 cm2/V-s

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    Answer : Option B

    Explanation :

    No answer description available for this question.

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