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  1. Consider a silicon p-n junction at room temperature having the following parameters:
    Doping on the n-side = 1 x 1017 cm-3
    Depletion width on the n-side = 0.1 μm
    Depletion width on the p-side = 1.0 μm
    Intrinsic carrier concentration = 1.4 x 1014F. cm-1.
    Thermal voltage = 26mV
    Permittivity of free space = 8.85 x 10-14F. cm-1.
    Dielectric constant of silicon = 12. The peak electric field in the device is

    2. A.
    0.15 MV.com-1, directed from p-region to n-region
    B.
    0.15 MV.com-1, directed from n-region to p-region
    C.
    1.80 MV.com-1, directed from p-region to n-region
    D.
    1.80 MV.com-1, directed from n-region to p-region

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    Answer : Option B

    Explanation :

    No answer description available for this question.

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