Discussion :: Exam Questions Paper
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A silicon wafer has 100 nm of oxide it and is inserted in a furnace at a temperature above 1000°C for further oxidation in dry oxygen. The oxidation rate
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A.
is independent of current oxide thickness and temperature
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B.
is independent of current oxide thickness but depends on temperature
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C.
slows down as the oxide grows
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D.
is zero as the existing oxide prevents further oxidation
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Answer : Option D
Explanation :
No answer description available for this question.
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