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Discussion :: Microwave Communication

  1. Assertion (A): Impatt diode is an avalanche diode.

    Reason (R): Avalanche breakdown phenomenon occurs when a p-n junction is reverse biased.

    2. A.
    Both A and R are correct and R is correct explanation of A
    B.
    Both A and R are correct but R is not correct explanation of A
    C.
    A is correct but R is wrong
    D.
    A is wrong but R is correct

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    Answer : Option B

    Explanation :

    An Impatt diode has n+ - p - i - p + structure and is used with reverse bias.

    It exhibits negative resistance and operates on the principle of avalanche breakdown.

    Impatt diode circuits are classified as broadly tunable circuit, low Q circuit and high Q circuit.

    The impedance of Impatt diode is a few ohms. The word Impatt stands for Impact Avalanche Transit Time diode.

    The features of Impatt diode oscillator are : frequency 1 to 300 GHz, Power output (0.5 W to 5 W for single diode circuit and upto 40 W for combination of several diodes), efficiency about 20%.

    Its applications include police radar systems, low power microwave transmitter etc.

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