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EEE :: FET(Field Effect Transistors)

  1. The pinch-off voltage in a JFET is analogous to ___________ voltage in a vacuum tube

  2. A.

     anode

    B.

     cathode

    C.

     grid cut off

    D.

     none of the above

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  3. At cut-off, the JFET channel is ___________

  4. A.

     at its widest point

    B.

     completely closed by the depletion region

    C.

     extremely narrow

    D.

     reverse baised

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  5. For VGS = 0 V, the drain current becomes constant when VDS exceeds

  6. A.

     cut off

    B.

     VDD

    C.

     VP

    D.

     o V

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  7. When drain voltage equals the pinch-off-voltage, then drain current ___________ with the increase in drain voltage

  8. A.

     decreases

    B.

     increases

    C.

     remains constant

    D.

     none of the above

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  9. A n-channel D-MOSFET with a positive VGS is operating in ___________

  10. A.

     the depletion-mode

    B.

     the enhancement-mode

    C.

     cut off

    D.

     saturation

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  11. ___________ has the lowest noise-level

  12. A.

     triode

    B.

     ordinary trnsistor

    C.

     tetrode

    D.

     JFET

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  13. Which of the following devices has the highest input impedance?

  14. A.

     JFET

    B.

     MOSFET

    C.

     Crystal diode

    D.

     ordinary transistor

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  15. The transconductance of a JFET ranges from ___________

  16. A.

     100 to 500 mA/V

    B.

     500 to 1000 mA/V

    C.

     0.5 to 30 mA/V

    D.

     above 1000 mA/V

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  17. In a p-channel JFET, the charge carriers are ___________

  18. A.

     electrons

    B.

     holes

    C.

     both electrons and holes

    D.

     none of the above

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  19. The pinch-off voltage of a JFET is about ___________

  20. A.

     5 V

    B.

     0.6 V

    C.

     15 V

    D.

     25 V

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