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ECE :: Exam Questions Paper

  1. In which direction is the plane wave E = 50 sin (108t + 2z) V/m (where is the unit vector in y-direction), travelling?

  2. A.
    along y direction
    B.
    along -y direction
    C.
    along z direction
    D.
    along -z direction

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  3. Which one of the following compounds is widely used for making ferrites?

  4. A.
    FeO
    B.
    CuO
    C.
    MgO
    D.
    Fe2O3

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  5. Assertion (A): Cut-in voltage for Germanium diode is greater than that for silicon diode.

    Reason (R): Germanium diode has a higher reverse saturation current than silicon diode.

  6. A.
    Both A and R are individually true and R is the correct explanation of A
    B.
    Both A and R are individually true but R is not the correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  7. Laplace transform of unit triplet function is __________ .

  8. A.
    1
    B.
    s
    C.
    s2
    D.

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  9. What can be the maximum dimension of an array in C language program?

  10. A.
    3
    B.
    4
    C.
    5
    D.
    It is compiler dependent

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  11. Choose the correct statement

  12. A.
    The reflection coefficient (r) of a transmission line is greater than 1
    B.
    r varies from 0 to ∞
    C.
    r is less than or equal to 1
    D.
    r varies from - ∞ to + ∞

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  13. Which of the following modes can exist in a rectangular waveguide?

  14. A.
    TM10
    B.
    TE10
    C.
    TM00
    D.
    TM01

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  15. For plane wave propagating in free space or two conductor transmission line, what must be the relationship between the phase velocity vp , the group velocity vg and speed of light c?

  16. A.
    vp > c > vg
    B.
    vp < c < vg
    C.
    vp = c = vg
    D.
    vp < vg < c

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  17. The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T = 300 K, electronic charge = 1.6 x 10-19C, thermal voltage = 26mV and electron mobility = 1350 cm2/V-s

    The magnitude of the electric field at x = 0.5 μm is

  18. A.
    1 kV/cm
    B.
    5 kV/cm
    C.
    10 kV/cm
    D.
    26 kV/cm

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  19. Assertion (A): The small signal analysis of a transistor amplifier is done to obtain the current gain, voltage gain and the conversion efficiency of an amplifier.

    Reason (R): The small signal analysis of a transistor amplifier uses the small signal parameters of the transistor.

  20. A.
    Both A and R are individually true and R is the correct explanation of A
    B.
    Both A and R are individually true but R is not the correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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