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EEE :: FET(Field Effect Transistors)

  1. ICEO = () ICBO

  2. A.

     ß

    B.

     1 + a

    C.

     1 + ß

    D.

     none of the above

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  3. In a pnp transistor, the current carriers are ___________

  4. A.

     acceptor ions

    B.

     donor ions

    C.

     free electrons

    D.

     holes

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  5. The base of a transistor is ___________ doped

  6. A.

     heavily

    B.

     moderately

    C.

     lightly

    D.

     none of the above

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  7. The collector of a transistor is ___________ doped

  8. A.

     heavily

    B.

     moderately

    C.

     lightly

    D.

     none of the above

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  9. The emitter of a transistor is ___________ doped

  10. A.

     lightly

    B.

     heavily

    C.

     moderately

    D.

     none of the above

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  11. The base resistor method is generally used in

  12. A.

     Amplifier circuits

    B.

     Switching circuits

    C.

     Rectifier circuits

    D.

     None of the above

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  13. In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ?

  14. A.

     2000 Ω

    B.

     1400 Ω

    C.

     800 Ω

    D.

     1600 Ω

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  15. The number of depletion layers in a transistor is ___________

  16. A.

     four

    B.

     three

    C.

     one

    D.

     two

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  17. The element that has the biggest size in a transistor is ___________

  18. A.

     collector

    B.

     base

    C.

     emitter

    D.

     collector-base-junction

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  19. The input impedance of a transistor is ___________

  20. A.

     high

    B.

     low

    C.

     very high

    D.

     almost zero

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