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EEE :: FET(Field Effect Transistors)

  1. As the temperature of a transistor goes up, the base emitter resistance ___________

  2. A.

     decreases

    B.

     increases

    C.

     remains the same

    D.

     none of the above

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  3. A transistor has ___________

  4. A.

     one pn junction

    B.

     two pn junctions

    C.

     three pn junctions

    D.

     four pn junctions

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  5. The collector-base junction in a transistor has ___________

  6. A.

     forward bias at all times

    B.

     reverse bias at all times

    C.

     low resistance

    D.

     none of the above

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  7. If biasing is not done in an amplifier circuit, it results in ___________

  8. A.

     Decrease in the base current

    B.

     Unfaithful amplification

    C.

     Excessive collector bias

    D.

     None of the above

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  9. The disadvantage of voltage divider bias is that it has ___________

  10. A.

     High stability factor

    B.

     Low base current

    C.

     Many resistors

    D.

     None of the above

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  11. The voltage gain of a tuned amplifier is ___________ at resonant frequency

  12. A.

     Minimum

    B.

     Maximum

    C.

     Half-way between maximum and minimum

    D.

     Zero

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  13. In voltage divider bias, VCC = 25 V; R1 = 10 kΩ; R2 = 2.2 V ; RC = 3.6 V and RE =1 kΩ. What is the emitter voltage?

  14. A.

     7 V

    B.

     3 V

    C.

     5 V

    D.

     8 V

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  15. In series resonance, there is ___________

  16. A.

     Voltage amplification

    B.

     Current amplification

    C.

     Both voltage and current amplification

    D.

     None of the above

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  17. In parallel resonance, there is ___________

  18. A.

     Both voltage and current amplification

    B.

     Voltage amplifications

    C.

     Current amplification

    D.

     None of the above

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  19. The zero signal IC is generally ___________ mA in the initial stages of a transistor amplifier

  20. A.

     4

    B.

     1

    C.

     3

    D.

     More than 10

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