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ECE :: Analog Electronics

Analog Electronics - Section 1
Analog Electronics - Section 2
Analog Electronics - Section 3
Analog Electronics - Section 4
Analog Electronics - Section 5
Analog Electronics - Section 6
Analog Electronics - Section 7
Analog Electronics - Section 8
Analog Electronics - Section 9
Analog Electronics - section-1
Analog Electronics - Section 10
Analog Electronics - Section 11
Analog Electronics - Section 12
Analog Electronics - Section 13
Analog Electronics - Section 14
Analog Electronics - Section 15
Analog Electronics - Section 16
Analog Electronics - Section 17
Analog Electronics - Section 18
Analog Electronics - Section 19
Analog Electronics - Section 20
Analog Electronics - Section 21
Analog Electronics - section-22
Analog Electronics - Section-23

  1. The gate electrode in the FET corresponds to the

    2. A.
    collector in a bipolar transistor
    B.
    base in a bipolar transistor
    C.
    emitter in a bipolar transistor
    D.
    none of the above

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  2. The properties of JFET resemble those of

    3. A.
    thermionic values
    B.
    N-P-N transistors
    C.
    P-N-P transistors
    D.
    unijunction transistor

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  3. Assertion (A): Transformer coupling has the disadvantage of the weight of transformer and Saturation of core

    Reason (R): Transformer coupling is very suitable for impedance matching

    4. A.
    Both A and R are correct and R is correct explanation for A
    B.
    Both A and R are correct but R is not correct explanation for A
    C.
    A is correct R is wrong
    D.
    A is wrong R is correct

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  4. A Hartley oscillator is used for generation

    5. A.
    very low frequency oscillation
    B.
    radio frequency oscillation
    C.
    microwave oscillation
    D.
    audio-frequency oscillation

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  5. In a CE class A amplifier the quiescent current and voltage are ICQ and VCEQ. The maximum power output can be

    6. A.
    (VCEQ)(ICQ)
    B.
    C.
    D.
    2 (VCEQ)(ICQ)

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  6. The ripple factor of a power supply is

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  7. In a P-N-P junction transistor as compared to base region is more heavily doped so that

    8. A.
    leakage current is minimized
    B.
    recombination will be increased in the base region
    C.
    the flow across the base regional is only because of electrons
    D.
    the flow across the base region is mainly because of holes

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  8. In every practical oscillator the loop gain is slightly more than unit and amplitude of oscillations is limited by

    9. A.
    magnitude of loop gain
    B.
    onset of non-linearity
    C.
    magnitude of gain
    D.
    β

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  9. Which of the following is not valid in case of FETs?

    10. A.
    It has low voltage gain
    B.
    It has high input impedance
    C.
    It has fast switching time
    D.
    It is voltage controlled device

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  10. When the emitter current of a transistor is changed by 1 mA, its collector current changes by 0.990 mA. The common base short circuit current gain a for the transistor is

    11. A.
    0.99
    B.
    1.01
    C.
    1.001
    D.
    0.990

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