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ECE :: Analog Electronics

  1. In a transistor amplifier, the reverse saturation current ICO

  2. A.
    Doubles for every 10°C rise in temperature
    B.
    Doubles for every 20°C rise in temperature
    C.
    Increase 100°C with temperature
    D.
    Doubles for every 5°C rise in temperature

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  3. When the emitter current of a transistor is changed by 1 mA, its collector current changes by 0.990 mA. The common-emitter short-circuit current gain is

  4. A.
    1
    B.
    199
    C.
    99
    D.
    9.9

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  5. In figure Vi may vary from 15 to 20 V and load current may vary from 20 mA to 100 mA. Suitable maximum value of R is

  6. A.
    20 Ω
    B.
    50 Ω
    C.
    100 Ω
    D.
    200 Ω

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  7. Assertion (A): A common collector amplifier is used for matching a high impedance source to a low impedance load

    Reason (R): A common collector amplifier has a near unity voltage gain

  8. A.
    Both A and R are correct and R is correct explanation for A
    B.
    Both A and R are correct but R is not correct explanation for A
    C.
    A is correct R is wrong
    D.
    A is wrong R is correct

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  9. In a crystal oscillator of the Colpitt's oscillator type, the crystal is put is place of the

  10. A.
    resistor R1
    B.
    condenser C2
    C.
    condenser C1
    D.
    inductor L

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  11. Astable multivibrator has

  12. A.
    one stable state
    B.
    two stable state
    C.
    two quasi-stable states
    D.
    one quasi stable state

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  13. Most small signal transistors are

  14. A.
    N-P-N, silicon, in a plastic package
    B.
    P-N-P, silicon, in a plastic package
    C.
    N-P-N, germanium in a metallic case
    D.
    P-N-P, germanium in a metallic case

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  15. A FET is a better clapper than a BJT because it has

  16. A.
    lower off-set voltage
    B.
    higher series ON resistance
    C.
    lower input current
    D.
    higher input impedance

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  17. The input gate current of FET is closer to

  18. A.
    few amperes
    B.
    few milli amperes
    C.
    few microamperes
    D.
    negligibly smaller value

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  19. When a 1 V increase in gate voltage changes the drain current 10 mA in an FET, its gm equals

  20. A.
    10 μμ
    B.
    100 μμ
    C.
    1000 μμ
    D.
    10000 μμ

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