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ECE :: Analog Electronics

Analog Electronics - Section 1
Analog Electronics - Section 2
Analog Electronics - Section 3
Analog Electronics - Section 4
Analog Electronics - Section 5
Analog Electronics - Section 6
Analog Electronics - Section 7
Analog Electronics - Section 8
Analog Electronics - Section 9
Analog Electronics - section-1
Analog Electronics - Section 10
Analog Electronics - Section 11
Analog Electronics - Section 12
Analog Electronics - Section 13
Analog Electronics - Section 14
Analog Electronics - Section 15
Analog Electronics - Section 16
Analog Electronics - Section 17
Analog Electronics - Section 18
Analog Electronics - Section 19
Analog Electronics - Section 20
Analog Electronics - Section 21
Analog Electronics - section-22
Analog Electronics - Section-23

  1. High cut off frequency can be expected in case of

    2. A.
    common-base
    B.
    common-emitter
    C.
    common-collector
    D.
    all of the above

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  2. Which coupling produces the minimum interference with frequency response?

    3. A.
    RC coupling
    B.
    Transformer coupling
    C.
    Direct coupling
    D.
    Impedance coupling

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  3. Assertion (A): A sine wave with slew rate distortion looks rectangular

    Reason (R): The maximum rate of output voltage change is called slew rate

    4. A.
    Both A and R are correct and R is correct explanation for A
    B.
    Both A and R are correct but R is not correct explanation for A
    C.
    A is correct R is wrong
    D.
    A is wrong R is correct

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  4. In a P-N-P transistor, electrons flow

    5. A.
    into the transistor at the collector only
    B.
    into the transistor at the base and the collector leads
    C.
    out of the transistor at base and collector leads
    D.
    out of the transistor at base, collector as well as emitter leads

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  5. A generator with an internal resistance of 600 Ω drives an amplifier whose input resistance is 400 Ω. The generator's open circuit voltages is 1 mV; the amplifier develops 100mV across an 8kΩ load. The input voltage to the amplifier is

    6. A.
    0.1 m V
    B.
    0.4 m V
    C.
    1 m V
    D.
    4 m V

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  6. Thermal run away of a transistor occurs when

    7. A.
    heat dissipation from transistor is excessive
    B.
    transistor joints melt due to high temperature
    C.
    there is excessive leakage current due to temperature rise
    D.
    none of the above

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  7. JFET has __________ degree of isolation between input and output, and a __________ noise figure.

    8. A.
    low, low
    B.
    high, high
    C.
    low, high
    D.
    high, low

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  8. The advantage of FET over BJT is

    9. A.
    high input impedance
    B.
    lower noise
    C.
    no thermal runaway
    D.
    all of the above

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  9. The MOSFET is almost ideal as a switching device because

    10. A.
    it has linear characteristics
    B.
    it works progressively
    C.
    it consumes low power
    D.
    it has longer life

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  10. The input and output signals for CE amplifier are always

    11. A.
    equal
    B.
    in phase
    C.
    out of phase
    D.
    complementary to each other

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