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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18
  1. Power diodes are generally

    2. A.

     Silicon diodes
    B.

     Germanium diodes
    C.

     Either of the above
    D.

     None of the above

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  2. Silicon is not suitable for fabrication of light emitting diodes because it is

    3. A.

     An indirect band gap semiconductor
    B.

     Direct band gap semiconductor
    C.

     Wideband gap semiconductor
    D.

     Narrowband gap semiconductor

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  3. When avalanche breakdown occurs covalent bonds are not affected.

    4. A.

     True
    B.

     False

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  4. Which variety of copper has the best conductivity?

    5. A.

     Pure annealed copper
    B.

     Hard drawn copper
    C.

     Induction hardened copper
    D.

     Copper containing traces of silicon

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  5. Free electrons exist in

    6. A.

     First band
    B.

     Second band
    C.

     Third band
    D.

     Conduction band

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  6. In a half wave rectifier, the load current flows

    7. A.

     Only for the positive half cycle of the input signal
    B.

     Only for the negative half cycle of the input signal
    C.

     For full cycle
    D.

     For less than fourth cycle

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  7. Assertion (A): In p-n-p transistor collector current is termed negative.
    Reason (R): In p-n-p transistor holes are majority carriers.

    8. A.

     Both A and R are true and R is correct explanation of A
    B.

     Both A and R are true but R is not a correct explanation of A
    C.

     A is true but R is false
    D.

     A is false but R is true

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  8. How many free electrons does a p type semiconductor has?

    9. A.

     Only those produced by thermal energy
    B.

     Only those produced by doping
    C.

     Those produced by doping as well as thermal energy
    D.

     Any of the above

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  9. Light dependent resistors are

    10. A.

     Highly doped semiconductor
    B.

     Intrinsic semiconductor
    C.

     Lightly doped semiconductor
    D.

     Either A or B

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  10. In a bipolar transistor, the emitter base junction has

    11. A.

     Forward bias
    B.

     Reverse bias
    C.

     Zero bias
    D.

     Zero or reverse bias

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