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ECE :: Electronic Devices and Circuits

  1. In P-N junction, the region containing the uncompensated acceptor and donor ions is called

  2. A.
    transition zone
    B.
    depletion region
    C.
    neutral region
    D.
    active region

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  3. In a photodiode the current is due to

  4. A.
    majority carriers
    B.
    minority carriers
    C.
    both majority and minority carriers
    D.
    either (a) or (b)

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  5. Consider the following statements

    1. Acceptor level lies close the valence band.
    2. Donor level lies close to the valence band.
    3. n type semiconductor behaves as an insulator at 0 K.
    4. p type semiconductor behaves as an insulator at 0 K.
    Of these statements:

  6. A.
    2 and 3 are correct
    B.
    1 and 3 are correct
    C.
    1 and 4 are correct
    D.
    3 and 4 are correct

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  7. If the temperature of on extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then

  8. A.
    the majority carrier density doubles
    B.
    the minority carrier density doubles
    C.
    the minority carrier density becomes 4 times the original value
    D.
    both majority and minority carrier densities double

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  9. Assertion (A): The conductivity of an n type semiconductor increases with increase in temperature and increase in density of donor atoms.

    Reason (R): Diffusion of carriers occurs in semiconductors.

  10. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  11. The conductivity of materials found in nature ranges from 109 ohm-1m-1 to nearly 1018 ohm-1 m-1 from this it can be concluded that the conductivity of silicon in ohm-1 cm-1 will be nearly

  12. A.
    0.5 x 10-15
    B.
    0.5 x 10-21
    C.
    0.5 x 10-12
    D.
    0.5 x 10-3

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  13. At any point on the v-i characteristics of a semiconductor diode, the slope of v-i characteristics is called

  14. A.
    resistance of diode
    B.
    conductance of diode
    C.
    incremental resistance of diode
    D.
    incremental conductance of diode

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  15. The collector to emitter cutoff current (ICE0) of a transmitter is related to collector to base cut off current (ICB0) as

  16. A.
    ICE0 = ICB0
    B.
    ICE0 = a ICB0
    C.
    ICE0 =
    D.
    ICE0 =

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  17. Which of the following statement about the photo electric emission is incorrect?

  18. A.
    The maximum velocity of emission varies with the frequency of incident light
    B.
    The maximum velocity of emission varies with the intensity of light
    C.
    The amount of photoelectric emission is directly proportional to the intensity of light
    D.
    The quantum yield depends on the frequency and not the intensity of incident light

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  19. In a semiconductor avalanche breakdown occurs when

  20. A.
    reverse bias exceeds the limiting value
    B.
    forward bias exceeds the limiting value
    C.
    forward current exceeds the limiting value
    D.
    potential barrier is reduced to zero

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