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ECE :: Electronic Devices and Circuits

  1. At a P-N junction, the potential barrier is due to the charges on either side of the junction, which consists of

  2. A.
    fixed donor and acceptor ions
    B.
    majority carriers only
    C.
    minority carriers only
    D.
    both majority and minority carriers

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  3. In a vacuum triode μ = rpgm.

  4. A.
    True
    B.
    False

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  5. The material which has zero temperature coefficient of resistance is

  6. A.
    manganin
    B.
    porcelain
    C.
    carbon
    D.
    aluminium

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  7. When the light falling on a photodiode increases, the reverse minority current

  8. A.
    increases
    B.
    increases or decreases
    C.
    decreases
    D.
    remains the same

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  9. When a ferromagnetic substance is magnetised, small changes in dimensions occur. Such a phenomenon is known as

  10. A.
    magnetic hystresis
    B.
    magnetic expansion
    C.
    magneto striction
    D.
    magneto calorisation

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  11. As the temperature of an intrinsic semiconductor material is increased

  12. A.
    protons get excited
    B.
    neutrons acquire charge
    C.
    energy of the atom is increased
    D.
    additional holes are created in the conduction band

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  13. In an insulated gate FET, the polarity of inversion layer is the same as that of

  14. A.
    minority carriers in source
    B.
    majority carriers in source
    C.
    charge on gate electrode
    D.
    minority carriers in drain

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  15. Hall effect can be used to find the type of semiconductor.

  16. A.
    True
    B.
    False

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  17. The conductivity of germanium increases by about 6 percent per degree increase in temperature.

  18. A.
    True
    B.
    False

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  19. The range of visible light is

  20. A.
    300 to 2000 Å
    B.
    200 - 4000 Å
    C.
    4000 to 7700 Å
    D.
    more than 10000 Å

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