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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. Varactor diode is forward biased when it is used.

    2. A.
    True
    B.
    False

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  2. A good ohmic contact on a P-type semiconductor chip is formed by introducing

    3. A.
    gold as an impurity below the contact
    B.
    high concentration of donors below the contact
    C.
    high concentration of acceptors below the contact
    D.
    thin insulator layer between the metal and semiconductor

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  3. The impurity added to extrinsic semiconductor is of the order of

    4. A.
    1 in 100
    B.
    1 in 1000
    C.
    1 in 100, 0000
    D.
    1 in 100, 000, 000

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  4. For a BJT, avalanche multiplication factor depends on

    5. A.
    VCE
    B.
    VCB
    C.
    VBE
    D.
    none

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  5. The impurity commonly used for realizing the base region of a n-p-n transistor is

    6. A.
    gallium
    B.
    indium
    C.
    boron
    D.
    phosphorus

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  6. Assertion (A): In CE connection of n-p-n transistor. VCE is positive.

    Reason (R): In BJT, the base collector junction is reverse biased.

    7. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  7. Assertion (A): Tunnel diode is used in many pulse and digital circuits.

    Reason (R): The v-i curve of a tunnel diode resembles letter 'N'.

    8. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  8. In ferromagnetic materials

    9. A.
    the atomic magnetic moments are antiparallel and unequal
    B.
    the atomic magnetic moments are parallel
    C.
    the constituent is iron only
    D.
    one of the constituents is iron

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  9. Which one of the following circuits is most suitable as an oscillator at a frequency of 100Hz?

    10. A.
    Hartley oscillator
    B.
    Colpitts oscillator
    C.
    Crystal oscillator
    D.
    Twin-T oscillator

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  10. The conductivity of an intrinsic semiconductor is

    11. A.
    generally less than that of a doped semiconductor
    B.
    given by σ1 = eni (μn - μp)
    C.
    given by σ1 = eni (μp + μn)
    D.
    given by σ1 = ni (μn + μp)

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