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ECE :: Electronic Devices and Circuits

  1. A Darlington emitter follower circuit is some times used in the output stage of a TTL gate in order to

  2. A.
    increase its IQL
    B.
    reduce its I0H
    C.
    increase its speed of operation
    D.
    reduce power dissipation

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  3. Assertion (A): At room temperature the fermi level in p type semiconductor lies nearer to the valence band and in n type semiconductor it lies nearer to the conduction band.

    Reason (R): At room temperature, the p type semiconductor is rich in holes and n type semiconductor is rich in electrons.

  4. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  5. The drift velocity of electrons and holes is proportional to electric field strength.

  6. A.
    True
    B.
    False

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  7. In an n channel MOSFET, the substrate is connected

  8. A.
    to negative terminal of battery
    B.
    to positive terminal of battery
    C.
    to either positive or negative terminal of battery
    D.
    none of the above

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  9. Piezoelectric materials serves as a source of

  10. A.
    microwaves
    B.
    ultrasonic waves
    C.
    musical waves
    D.
    resonant waves

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  11. Which of the following is not a semiconductor?

  12. A.
    Silicon
    B.
    Calcium arsenide
    C.
    Germanium
    D.
    Zinc sulphide

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  13. At absolute temperature

  14. A.
    the forbidden energy gap in germanium is higher than that in silicon
    B.
    the forbidden energy gap in germanium and silicon are equal
    C.
    the forbidden energy gap in silicon is higher than that in germanium
    D.
    none of the above

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  15. If E is electric field intensity, the current density due to field emission is proportional to

  16. A.
    E
    B.
    E2
    C.
    E2.5
    D.
    E3/2

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  17. When a high voltage reference is required it is advantageous to use two or more zener diodes in series to allow

  18. A.
    higher voltage
    B.
    higher dissipation
    C.
    lower temperature coefficient
    D.
    all of the above

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  19. Assertion (A): When p-n junction is forward biased, steady current flows.

    Reason (R): When a p-n junction is forward biased, free electrons cross the junction from n to p and holes from p to n.

  20. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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