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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. Lowest resistivity of the following is

    2. A.
    constantan
    B.
    german silver
    C.
    manganin
    D.
    nichrome

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  2. Peak inverse voltage will be highest for

    3. A.
    half wave rectifier
    B.
    full wave rectifier
    C.
    bridge rectifier
    D.
    three phase full wave rectifier

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  3. In CE configuration, the output characteristics of a bipolar junction transistor is drawn between

    4. A.
    IC and VCB
    B.
    IE and VCB
    C.
    IC and VCE
    D.
    IE and VCE

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  4. Assertion (A): The reverse current in a p-n junction is nearly constant.

    Reason (R): The reverse breakdown voltage of a p-n diode depends on the extent of doping.

    5. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  5. An n type semiconductor is illuminated by a steady flux of photons with energy greater than the band gap energy. The change in conductivity Δσ obeys which relation?
    [ Here, e is the electron charge, μn electron mobility, μp hole mobility, Δn (Δp) is the excess electron (hole) density ].

    6. A.
    Δσ = 0
    B.
    Δσ = e(σn + σp) Δn
    C.
    Δσ = e(μnΔn - μpΔp)
    D.
    Δσ = e μnΔn

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  6. Resistivity of metals is expressed in terms of

    7. A.
    μ ohm
    B.
    μ ohm/cm
    C.
    μ ohm-cm
    D.
    μ ohm-cm/°C

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  7. Figure shows characteristics curves for bipolar transistor. These curves are

    8. A.
    output characteristics of n-p-n transistor (common base)
    B.
    output characteristics of p-n-p transistor (common base)
    C.
    output characteristics of n-p-n transistor (common emitter)
    D.
    output characteristics of p-n-p transistor (common emitter)

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  8. Zener diode is invariably used with

    9. A.
    forward bias
    B.
    reverse bias
    C.
    either (a) or (b)
    D.
    zero bias

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  9. The relation between plate current and plate voltage of a vacuum diode is called

    10. A.
    Richardson Dushman equation
    B.
    Langmuir Child law
    C.
    Ohm's law
    D.
    Boltzmann's law

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  10. Given that the band gap of cadmium sulphide is 2.5 eV, the maximum photon wavelength, for e--hole pair generation will be

    11. A.
    5400 mm
    B.
    540 mm
    C.
    5400 Å
    D.
    540 Å

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