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ECE :: Electronic Devices and Circuits

  1. Under low level injection assumption, the infected minority carrier current for an extrinsic semiconductor is essentially the

  2. A.
    diffusion current
    B.
    drift current
    C.
    recombination current
    D.
    induced current

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  3. As the reverse voltage is increased, the depletion layer

  4. A.
    becomes narrow
    B.
    widens
    C.
    remains the same
    D.
    reduce to zero

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  5. The cascade amplifier is a multistage configuration of

  6. A.
    CC-CB
    B.
    CE-CB
    C.
    CB-CC
    D.
    CE-CC

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  7. The light output of LED varies as (current)n. The value of n is about

  8. A.
    0.5
    B.
    1
    C.
    1.3
    D.
    2.1

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  9. If an electron move through a potential difference of 500 V, the energy possesses by it will be

  10. A.
    500 ergs
    B.
    500 joules
    C.
    500 eV
    D.
    500 mV

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  11. In which of the following does a negative resistance region exist in the v-i characteristics?

  12. A.
    PIN diode
    B.
    Schottky diode
    C.
    Tunnel diode
    D.
    Zener diode

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  13. The intrinsic resistivity of silicon at 300 K is about

  14. A.
    1 Ω-cm
    B.
    400 Ω-cm
    C.
    10000 Ω-cm
    D.
    230000 Ω-cm

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  15. What happens when forward bias is applied to a junction diode?

  16. A.
    Majority carrier current is reduced to zero
    B.
    Minority carrier current is reduced to zero
    C.
    Potential barrier is increased
    D.
    Potential barrier is decreased

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  17. A differential amplifier is invariably used in the I/P stage of all OP-amps. This is done basically to produce the OP-amp with a very high.

  18. A.
    CMRR
    B.
    bandwidth
    C.
    slew rate
    D.
    open-loop gain

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  19. The addition of impurity in extrinsic semiconductor is about 1 part in 108 parts.

  20. A.
    True
    B.
    False

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