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ECE :: Electronic Devices and Circuits

  1. An incremental model of a solid state device is one which represents the

  2. A.
    ac property of the device at desired operating point
    B.
    dc property of the device at all operating points
    C.
    complete ac and dc behaviour at all operating points
    D.
    ac property of the device at all operating points

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  3. What is the correct sequence of the following step in the fabrication of a monolithic, Bipolar junction transistor?

    1. Emitter diffusion
    2. Base diffusion
    3. Buried layer formation
    4. E pi-layer formation
    Select the correct answer using the codes given below:

  4. A.
    3, 4, 1, 2
    B.
    4, 3, 1, 2
    C.
    3, 4, 2, 1
    D.
    4, 3, 2, 1

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  5. For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (VSB > 0), the threshold voltage VT of the MOSFET will

  6. A.
    remain unchanged
    B.
    decrease
    C.
    change Polarity
    D.
    increase

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  7. Which of the following is used for generating time varying wave forms?

  8. A.
    MOSFET
    B.
    PIN diode
    C.
    Tunnel diode
    D.
    UJT

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  9. Calculate the resistivity of n-type semiconductor from the following data, Density of holes = 5 x 1012 cm-3. Density of electrons = 8 x 1013 cm-3, mobility of conduction electron = 2.3 x 104 cm2/ V-sec and mobility of holes = 100 cm2/V-sec.

  10. A.
    0.43 Ω-m
    B.
    0.34 Ω-m
    C.
    0.42 Ω-m
    D.
    0.24 Ω-m

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  11. An one sided abrupt junction has 1021/m3 of dopants on the lightly doped side, zero bias voltage and a built-in potential of 0.2 V. The depletion width of abrupt junction.(q = 1.6 x 10-19 C, εr =16, ε0 = 8.87 x 10-12 F/m) is

  12. A.
    0.036 nm
    B.
    0.6 μm
    C.
    3 mm
    D.
    1.5 mm

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  13. n-type semiconductors

  14. A.
    are negatively charged
    B.
    are produced when indium is added as impurity to germanium
    C.
    are produced when phosphorus is added as impurity to silicon
    D.
    none of the above

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  15. In all metals

  16. A.
    conductivity decreases with increase in temperature
    B.
    current flow by electrons as well as by holes
    C.
    resistivity decreases with increase in temperature
    D.
    the gap between valence and conduction bands is small

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  17. The voltage across a zener diode

  18. A.
    is constant in forward direction
    B.
    is constant in reverse direction
    C.
    is constant in both forward and reverse directions
    D.
    none of the above

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  19. Assertion (A): Two transistors one n-p-n and the other p-n-p are identical in all respects (doping, construction, shape, size). The n-p-n transistor will have better frequency response.

    Reason (R): The electron mobility is higher than hole mobility.

  20. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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