ECE :: Electronic Devices and Circuits
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The amount of photoelectric emission current depends on the frequency of incident light.
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When a p-n junction is forward biased
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The carriers of n channel JFET are
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The depletion layer around p-n junction in JFET consists of
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The mean free path of conduction electrons in copper is about 4 x 10-8 m. For a copper block, find the electric field which can give, on an average, 1 eV energy to a conduction electron
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When a p-n-p transistor is properly biased to operate in active region the holes from emitter.
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Assertion (A): Silicon is preferred over germanium in manufacture of semiconductor devices.
Reason (R): Forbidden gap in silicon is more than that in germanium.
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Assertion (A): A decrease in temperature increases the reverse saturation current in a p-n diode.
Reason (R): When a diode is reverse biased surface leakage current flows.
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At room temperature a semiconductor material is
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1 eV = e.E x d 