Menu
Home / ECE / Electronic Devices and Circuits :: Section 2

ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. The drain characteristics of JFET in operating region, are

    2. A.
    inclined upwards
    B.
    almost flat
    C.
    inclined downwards
    D.
    inclined upwards or downwards

    View Answer

    Workspace

    Discuss Discuss in Forum

  2. As temperature increases

    3. A.
    the forbidden energy gap in silicon and germanium increase
    B.
    the forbidden energy gap in silicon and germanium decrease
    C.
    the forbidden energy gap in silicon decreases while that in germanium decreases
    D.
    the forbidden energy gap in silicon increases while that in germanium decreases

    View Answer

    Workspace

    Discuss Discuss in Forum

  3. When a reverse bias is applied to a p-n junction, the width of depletion layer.

    4. A.
    decreases
    B.
    increases
    C.
    remains the same
    D.
    may increase or decrease

    View Answer

    Workspace

    Discuss Discuss in Forum

  4. The Hall constant in Si bar is given by 5 x 103 cm3/ coulomb, the hole concentration in the bar is given by

    5. A.
    105/cm3
    B.
    1.25 x 1015/cm3
    C.
    1.5 x 1015/cm3
    D.
    1.6 x 1015/cm3

    View Answer

    Workspace

    Discuss Discuss in Forum

  5. Which of the following devices has a silicon dioxide layer?

    6. A.
    NPN transistor
    B.
    Tunnel diode
    C.
    JFET
    D.
    MOSFET

    View Answer

    Workspace

    Discuss Discuss in Forum

  6. Which statement is false as regards holes

    7. A.
    Holes exist in conductors as well as semiconductors
    B.
    Holes constitute positive charges
    C.
    Holes exist only in semiconductors
    D.
    Holes and electrons recombine

    View Answer

    Workspace

    Discuss Discuss in Forum

  7. Photo electric emission can occur only if

    8. A.
    wave length of incident radiation is equal to threshold value
    B.
    wave length of incident radiation is less than threshold value
    C.
    frequency of incident radiation is less than threshold frequency
    D.
    none of the above

    View Answer

    Workspace

    Discuss Discuss in Forum

  8. The reverse saturation current of a diode does not depend on temperature.

    9. A.
    True
    B.
    False

    View Answer

    Workspace

    Discuss Discuss in Forum

  9. In a piezoelectric crystal, application of a mechanical stress would produce

    10. A.
    plastic deformation of the crystal
    B.
    magnetic Dipoles in the crystal
    C.
    electric polarization in the crystal
    D.
    shift in the Fermi level

    View Answer

    Workspace

    Discuss Discuss in Forum

  10. The value of a in a transistor

    11. A.
    is always equal to 1
    B.
    is less than 1 but more than 0.9
    C.
    is about 0.4
    D.
    is about 0.1

    View Answer

    Workspace

    Discuss Discuss in Forum

Java Programming Questions and Answers Interview Questions and Answers