Menu
Home / ECE / Electronic Devices and Circuits :: Section 13

ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. The dc output voltage from a power supply

    2. A.
    increases with higher values of filter capacitance and decreases with more load current
    B.
    decreases with higher values of filter capacitance and increases with more load current
    C.
    decreases with higher values of filter capacitance as well as with more load current
    D.
    increases with higher values of filter capacitance as well as with more load current

    View Answer

    Workspace

    Discuss Discuss in Forum

  2. Avalanche beakdown is primarily dependent on the phenomenon of

    3. A.
    doping
    B.
    collision
    C.
    recombination
    D.
    ionization

    View Answer

    Workspace

    Discuss Discuss in Forum

  3. In a JFET, the drain current is maximum when

    4. A.
    VGS = VDS
    B.
    VGS = pinch off voltage
    C.
    VGS = 0
    D.
    VGS is negative

    View Answer

    Workspace

    Discuss Discuss in Forum

  4. The holes diffuse from P-region to the N-region in a P-N junction diode because

    5. A.
    there is greater concentration of holes in the P-region as compared to N-region
    B.
    there is greater concentration of holes in the N-region as compared to P-region
    C.
    the free electrons in the N-region attract them
    D.
    potential difference facilities such transfer

    View Answer

    Workspace

    Discuss Discuss in Forum

  5. Surface leakage current is a part of

    6. A.
    reverse current
    B.
    forward current
    C.
    reverse breakdown
    D.
    forward breakdown

    View Answer

    Workspace

    Discuss Discuss in Forum

  6. The forbidden energy gap in semiconductors

    7. A.
    is always zero
    B.
    lies just below the valence band
    C.
    lies between the valence band and the conduction band
    D.
    lies just above the conduction band

    View Answer

    Workspace

    Discuss Discuss in Forum

  7. In commercial electron tubes the current produced by the cathode at 1000 K is about

    8. A.
    0.01 A per cm2 of cathode surface
    B.
    0.1 A per cm2 of cathode surface
    C.
    1 A per cm2 of cathode surface
    D.
    5 A per cm2 of cathode surface

    View Answer

    Workspace

    Discuss Discuss in Forum

  8. In a conductor the conduction and valence bands overlap

    9. A.
    True
    B.
    False

    View Answer

    Workspace

    Discuss Discuss in Forum

  9. In which of the following device electrons will be the majority carriers?

    10. A.
    P-type semiconductor
    B.
    N-type semiconductor
    C.
    N-P-N transistor
    D.
    P-N-P transistor

    View Answer

    Workspace

    Discuss Discuss in Forum

  10. An n channel JFET has IDS whose value is

    11. A.
    maximum for VGS = 0 and minimum for VGS negative and large
    B.
    minimum for VGS = 0 and maximum for VGS negative and large
    C.
    maximum for VGS = 0 and minimum for VGS positive and large
    D.
    minimum for VGS = 0 and maximum for VGS positive and large

    View Answer

    Workspace

    Discuss Discuss in Forum

Java Programming Questions and Answers Interview Questions and Answers