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ECE :: Electronic Devices and Circuits

  1. The dc output voltage from a power supply

  2. A.
    increases with higher values of filter capacitance and decreases with more load current
    B.
    decreases with higher values of filter capacitance and increases with more load current
    C.
    decreases with higher values of filter capacitance as well as with more load current
    D.
    increases with higher values of filter capacitance as well as with more load current

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  3. Avalanche beakdown is primarily dependent on the phenomenon of

  4. A.
    doping
    B.
    collision
    C.
    recombination
    D.
    ionization

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  5. In a JFET, the drain current is maximum when

  6. A.
    VGS = VDS
    B.
    VGS = pinch off voltage
    C.
    VGS = 0
    D.
    VGS is negative

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  7. The holes diffuse from P-region to the N-region in a P-N junction diode because

  8. A.
    there is greater concentration of holes in the P-region as compared to N-region
    B.
    there is greater concentration of holes in the N-region as compared to P-region
    C.
    the free electrons in the N-region attract them
    D.
    potential difference facilities such transfer

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  9. Surface leakage current is a part of

  10. A.
    reverse current
    B.
    forward current
    C.
    reverse breakdown
    D.
    forward breakdown

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  11. The forbidden energy gap in semiconductors

  12. A.
    is always zero
    B.
    lies just below the valence band
    C.
    lies between the valence band and the conduction band
    D.
    lies just above the conduction band

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  13. In commercial electron tubes the current produced by the cathode at 1000 K is about

  14. A.
    0.01 A per cm2 of cathode surface
    B.
    0.1 A per cm2 of cathode surface
    C.
    1 A per cm2 of cathode surface
    D.
    5 A per cm2 of cathode surface

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  15. In a conductor the conduction and valence bands overlap

  16. A.
    True
    B.
    False

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  17. In which of the following device electrons will be the majority carriers?

  18. A.
    P-type semiconductor
    B.
    N-type semiconductor
    C.
    N-P-N transistor
    D.
    P-N-P transistor

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  19. An n channel JFET has IDS whose value is

  20. A.
    maximum for VGS = 0 and minimum for VGS negative and large
    B.
    minimum for VGS = 0 and maximum for VGS negative and large
    C.
    maximum for VGS = 0 and minimum for VGS positive and large
    D.
    minimum for VGS = 0 and maximum for VGS positive and large

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