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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. For generating 1 MHz frequency signal, the most suitable circuit is

    2. A.
    phase shift oscillator
    B.
    weinbridge oscillator
    C.
    colpitt's oscillator
    D.
    clapp oscillator

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  2. A doped semi-conductor is called

    3. A.
    impure semi-conductor
    B.
    dipole semi-conductor
    C.
    bipolar semi-conductor
    D.
    extrinsic semi-conductor

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  3. In n type MOSFET, the substrate

    4. A.
    is p type
    B.
    is n type
    C.
    is metallic
    D.
    may be p or n type

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  4. The first and the last critical frequency of an RC driving point impedance function must respectively by

    5. A.
    a zero and a pole
    B.
    a zero and a zero
    C.
    a pole and a pole
    D.
    a pole and a zero

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  5. The diffusion current is proportional to

    6. A.
    applied electric field
    B.
    concentration gradient of charge carrier
    C.
    square of the electric field
    D.
    cube of the applied electric field

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  6. In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is

    7. A.
    P+ -doped
    B.
    n+ -doped
    C.
    used to reduce the parasitic capacitance
    D.
    located in the emitter region

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  7. Which quantity controls the effectiveness of LED in emitting light?

    8. A.
    Applied voltage
    B.
    Current
    C.
    Extent of doping
    D.
    Temperature

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  8. The current gain of a BJT is

    9. A.
    gm r0
    B.
    gm/r0
    C.
    gm rp
    D.
    gm/rp

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  9. Ferromagnetic materials exhibit

    10. A.
    a linear B-H behaviour
    B.
    a non-linear B-H behaviour
    C.
    an exponential B-H behaviour
    D.
    none of the above

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  10. The saturation current in a semi-conductor diode

    11. A.
    depends on forward voltage
    B.
    depends on reverse voltage
    C.
    is due to thermally generated minority carriers
    D.
    none of the above

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