ECE :: Electronic Devices and Circuits
-
GaAs has an energy gap 1.43 eV the optical cut off wavelength of GaAs would lie in the
-
Which of the following is basically a voltage controlled capacitance?
-
When the i-v curve of a photodiode passes through origin the illumination is
-
An n type silicon bar 0.1 cm long and 100 μm2 in cross-sectional area has a majority carrier concentration of 5 x 1020/m3 and the carrier mobility is 0.13 m0/V-s at 300k. If the charge of an electron is 1.6 x 10-19 coulomb, then the resistance of the bar is
-
The threshold voltage of a MOSFET can be lowered by
- using thin gate oxide
- reducing the substrate concentration
- increasing the substrate concentration.
-
In which device does the extent of light controls the conduction
Whatsapp
Facebook
σ = neμn + Peμp