ECE :: Electronic Devices and Circuits
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The atomic number of silicon is 14. It can be therefore concluded that
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Ohmic range of metal film resistors is
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The current density J, free electron mobility μn, hole mobility μp , magnitude of free electron and hole concentration ni electric field E and charge on electron e, in intrinsic semiconductor are related as
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In order to achieve good stabilization in potential divider method current I1 through R1 and R2 should be
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A sample of N type semiconductor has electron density of 6.25 x 108/cm2 at 300 K. If the intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3 at this temperature, the hole density works out to be
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Addition of 0.3 to 3.5% silicon to iron
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A bistable multivibrator
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Transconductance indicates the
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