ECE :: Electronic Devices and Circuits
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A sample of N-type semiconductor has electron density of 6.25 x 1018/cm3 at 300k. If the intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3 at this temperature the hole density works out to be
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n channel FETs are better as compared to p-channel FET because
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An n channel depletion type MOSFET has
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In a JFET avalanche breakdown occurs when VDS = 22 V and VGS = 0. If VGS = -1 V, the avalanche breakdown will occur at
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The density of states (i.e. number of states per eV per m3) in the conduction band for energy level E is proportional to
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A-P type material has an acceptor ion concentration of 1 x 1016 per cm3. Its intrinsic carrier concentration is 1.48 x 1010/ cm. The hole and electron mobilities are 0.05m2/V-sec and 0.13 m2/V-sec respectively calculate the resistivity of the material
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Resistivity is a property of a semiconductor that depends on
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Operating point signifies that
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