ECE :: Electronic Devices and Circuits
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The current through a PN Junction diode with v volts applied to the P region to the N region, where (I0 is the reverse saturation current to the diode, m the ideality factor, k the Boltzmann constant, T the absolute temperature and q the magnitude of charge on an electron) is
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The ratio of diffusion constant for hole DP to the mobility for holes is proportional to
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The carrier mobility in a semiconductor is 0.4 m2/Vs. Its diffusion constant at 300k will be (in m2/s).
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During induction heating of metals which of the following is abnormally high?
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Assertion (A): Alkali metals are used as emitters in phototubes.
Reason (R): Alkali metals have low work functions.
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The output v-i characteristics of enhancement type MOSFET has
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In a full wave rectifier, the current in each of the diodes flows for
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In an ideal junction transistor the impurity concentration in emitter (E ), base (B) and collector (C) is such that
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The rating of a transformer to deliver 100 watts of D.C. power to a load under half wave rectifier will be nearly
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When a p-n junction is forward biased, the current remains zero till the applied voltage overcomes the barrier potential.
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