ECE :: Electronic Devices and Circuits
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The maximum power handling capacity of a resistor depends on
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Epitaxial growth is used in ICs
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The mean life time of carrier may range from 10-9 seconds to hundreds of μ-seconds.
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In which mode of BJT operation are both junctions forward biased?
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Addition of a small amount of antimony to germanium will result in
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In intrinsic semiconductor magnitude of free electron and hole concentrations are equal.
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A P-N junction offers
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In modern MOSFETS, the material used for the gate is
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Consider the following circuit configuration
- common Emitter
- common Base
- emitter follower
- emitter follower using Darlington pair.
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Assertion (A): Field emission is substantially independent of temperature.
Reason (R): When a high electric field is created at metal surface field emission may occur.
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A.
because it produces low parasitic capacitance
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B.
because it yields back to back isolating pn Junction
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C.
to grow single crystal n doped silicon on a single crystal P-type substrate
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D.
to grow Selectivity single crystal P doped silicon of one resistivity on a P type substrate of a different resistivity
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