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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. An increase of reverse voltage decreases the junction capacitance.

    2. A.
    True
    B.
    False

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  2. The maximum forward current in case of signal diode is in the range of

    3. A.
    1 A to 10 A
    B.
    0.1 A to 1 A
    C.
    few milli amperes
    D.
    few nano amperes

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  3. On which of the following effect do thermocouples work?

    4. A.
    Thomson effect
    B.
    Seeback effect
    C.
    Peltier effect
    D.
    Joule effect

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  4. Which of the following constitutes an active component?

    5. A.
    Semiconductor device
    B.
    Resistors
    C.
    Capacitors
    D.
    Inductors

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  5. Which of the following characteristics of a silicon p-n junction diode make it suitable for use as ideal diode?

    1. It has low saturation current.
    2. It has high value of cut in voltage.
    3. It can withstand large reverse voltage.
    4. When compared with germanium diode, silicon diode shows a lower degree of temperature dependence under reverse conditions.
    Select the answer using the given below

    6. A.
    1 and 2
    B.
    1, 2, 3, 4
    C.
    2, 3, 4
    D.
    1, 3

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  6. Resistivity of carbon is around

    7. A.
    10 to 70 m-ohm-cm
    B.
    80 to 130 m-ohm-cm
    C.
    800 to 1300 m-ohm-cm
    D.
    8000 to 13000 m-ohm-cm

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  7. Which of the following is anti-ferromagnetic material?

    8. A.
    CrSb
    B.
    NIO
    C.
    MnO
    D.
    All of the above

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  8. Assertion (A): The capacitance of a reverse biased pin diode is lower than that of reverse biased p-n diode.

    Reason (R): A PIN diode has an intrinsic layer between p and n regions.

    9. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  9. In the saturation region of CE output characteristics of n-p-n transistor, VCE is about

    10. A.
    0.5 V
    B.
    15 V
    C.
    - 0.5 V
    D.
    - 15 V

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  10. In n channel JFET

    11. A.
    ID and VDS are positive but VGS is negative
    B.
    ID and VGS are positive but VDS is negative
    C.
    VDS and VGS are positive but ID is negative
    D.
    ID, VDS and VGS are all positive

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