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ECE :: Electronic Devices and Circuits

  1. The forbidden band in semiconductors is of the order of

  2. A.
    6 eV
    B.
    1 eV
    C.
    10 eV
    D.
    0.01 eV

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  3. For an P-N-P transistor in normal operation its junction are biased as

  4. A.
    emitter base : reverse, collector base : forward
    B.
    emitter base : forward, collector base : reverse
    C.
    emitter base : forward, collector base : forward
    D.
    emitter base : reverse, collector base : reverse

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  5. A FET is to be operated as voltage variable resistor. For this drain to source voltage VDS should be,

  6. A.
    74
    B.
    = VP
    C.
    < VP
    D.
    > VP

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  7. Assertion (A): FET has characteristics very similar to that of pentode.

    Reason (R): Both FET and pentode are voltage controlled devices.

  8. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  9. The current gain of a bipolar transistor drops at high frequencies because of

  10. A.
    transistor capacitance
    B.
    high current effects in the base
    C.
    parasitic inductive elements
    D.
    the early effect

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  11. In an intrinsic semiconductor, the intrinsic charge concentration at any absolute temperature T is proportional to

  12. A.
    T
    B.
    T2
    C.
    T3
    D.
    T4

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  13. The conductivity of an intrinsic semiconductor is (symbols have the usual meanings).

  14. A.
    generally less than that a doped semiconductor
    B.
    σi = enin - μp)
    C.
    σi = enin + μp)
    D.
    σi = nin - μp)

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  15. The current due to thermionic emission is proportional to

  16. A.
    T
    B.
    T2
    C.
    T3
    D.
    T4

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  17. For radiating ultraviolet rays, LEDs use

  18. A.
    zinc sulphide
    B.
    gallium arsenide
    C.
    gallium phosphide
    D.
    none of the above

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  19. Addition of a small amount of antimony to germanium will result in

  20. A.
    formation of p-type semiconductor
    B.
    more free electrons than holes in semiconductor
    C.
    antimony concentrating on the edges of the crystal
    D.
    increased resistance

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