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ECE :: Electronic Devices and Circuits

  1. Consider the following statements about conditions that make a metal semiconductor contact rectifying

    1. N type semiconductor with work function φs more than work function φM of metal
    2. N type semiconductor with work function φs less than work function φM of metal
    3. P type semiconductor with work function φs more than work function φM of metal
    4. P type semiconductor with work function φs less than work function φM of metal.
    Of these statements

  2. A.
    1 and 3 are correct
    B.
    2 and 3 are correct
    C.
    1 and 4 are correct
    D.
    2 and 4 are correct

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  3. Silicon diodes have __________ reverse resistance than germanium diodes.

  4. A.
    a much smaller
    B.
    a much larger
    C.
    an infinite
    D.
    a negligible

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  5. The kinetic energy of photoelectrons emitted by a photo sensitive surface depends on

  6. A.
    intensity of the incident radiation
    B.
    wavelength of the incident radiation
    C.
    surface conditions of the surface
    D.
    angle of incidence of radiation

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  7. When reverse bias is applied to a junction diode

  8. A.
    minority carrier current is increased
    B.
    majority carrier current is increased
    C.
    potential barrier is lowered
    D.
    potential barrier is raised

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  9. Which of the following statements regarding two transistor model of p-n-n-p device is correct?

  10. A.
    It explain only the turn on portion of the device characteristics
    B.
    It explain only the turn off portion of the device characteristics
    C.
    It explain only the negative region portion of the device characteristics
    D.
    It explain all the regions of the device characteristics

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  11. Highest resistivity of the following is

  12. A.
    nichrome
    B.
    constantan
    C.
    metal
    D.
    manganin

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  13. Lowest noise can be expected in case of

  14. A.
    carbon composition resistors
    B.
    carbon film resistors
    C.
    tin oxide resistors
    D.
    metal film resistors

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  15. For a BJT, under the saturation condition,

  16. A.
    IC = βIB
    B.
    IC = aIB
    C.
    IC is independent of all other parameters
    D.
    IC < βIB

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  17. When a semiconductor bar is heated at one end, a voltage across the bar is developed. If the heated is positive the semiconductor is

  18. A.
    P-type
    B.
    n-type
    C.
    intrinsic
    D.
    highly degenerate

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