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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. A long specimen of P type semiconductor material

    2. A.
    is + vely charged
    B.
    is electrically neutral
    C.
    has an electric field directed along its length
    D.
    acts as a dipole

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  2. For BJT, under saturation condition

    3. A.
    IC = βIB
    B.
    IC > bIB
    C.
    IC is independent of all other parameters
    D.
    IC < βIB

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  3. An inductor filter has a ripple that __________ with load resistance and consequently is used only with relatively __________ load currents.

    4. A.
    decreases, low
    B.
    decreases, high
    C.
    increases, low
    D.
    increases, high

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  4. In a JFET

    5. A.
    the source gate junction is forward biased and gate drain junction is reverse biased
    B.
    both the junctions are forward biased
    C.
    both the junctions are reverse biased
    D.
    the source gate junction is reverse biased and gate drain junction is forward biased

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  5. Introducing a resistor in the emitter of a common amplifier stabilizes the d.c. operating point against variations in

    6. A.
    only the temperature
    B.
    only β of the transistor
    C.
    both temperature and β
    D.
    none of these

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  6. Consider the following statement S1 and S2.

    S1: The β of a bipolar transistor reduces if the base width is increased.

    S2: the β of a bipolar transistor increases if the doping concentration in the base is increased.

    Which one of the following is correct?

    7. A.
    S1 is False, S2 is true
    B.
    S1 and S2 both are true
    C.
    S1 and S2 both are false
    D.
    S1 is true, S2 is false

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  7. Assertion (A): A BJT can be used as a switch.

    Reason (R): In forward active mode emitter base junction is forward biased and base collector junction is reverse biased.

    8. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  8. The concentration of minority carriers in an extrinsic semiconductor under equilibrium is

    9. A.
    directly proportional to the doping concentration
    B.
    inversely proportional to doping concentration
    C.
    directly proportional to intrinsic concentration
    D.
    inversely proportional to the intrinsic concentration

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  9. The mean life time of the minority carriers is in the range of a few

    10. A.
    seconds
    B.
    milli seconds
    C.
    micro seconds
    D.
    nano seconds

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  10. Choose the correct match for input resistance of various amplifier configurations shown below configuration.

    CB : Common Base LO : Low
    CC : Common Collector  MO : moderate
    CE : Common EmitterHI: High

    11. A.
    CB-LO, CC-MO, CE-HI
    B.
    CB-LO, CC-HI, CE-MO
    C.
    CB-MO, CC-HI, CE-LO
    D.
    CB-HI, CC-LO, CE-MO

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