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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. The turn off time of a bipolar transistor is about

    2. A.
    0.5 ns
    B.
    10 ns
    C.
    70 ns
    D.
    150 ns

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  2. Hystresis loss least depends on

    3. A.
    frequency
    B.
    magnetic field intensity
    C.
    volume of the material
    D.
    grain orientation of material

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  3. In a bipolar transistor, emitter efficiency is about

    4. A.
    0.99
    B.
    0.9
    C.
    0.8
    D.
    0.7

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  4. For signal diodes the PIV rating is usually in the range

    5. A.
    1 V to 10V
    B.
    10 V to 30V
    C.
    30 V to 150V
    D.
    150 V to 400V

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  5. The potential of suppressor grid (with respect to cathode) is usually

    6. A.
    zero
    B.
    negative
    C.
    positive
    D.
    zero or positive

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  6. In n type semiconductor, the free electron concentration

    7. A.
    is nearly equal to density of donor atoms
    B.
    is much greater than density of donor atoms
    C.
    is much less than density of donor atoms
    D.
    may be equal to or more or less than density of donor atoms

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  7. If both emitter base and collector base junctions of a BJT are forward biased, the transistor is in

    8. A.
    active region
    B.
    saturated region
    C.
    cut off region
    D.
    inverse mode

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  8. Which of the following can be operated with positive as well as negative gate voltage?

    9. A.
    JFET
    B.
    Both JFET and MOSFET
    C.
    MOSFET
    D.
    Neither JFET nor MOSFET

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  9. The reverse breakdown voltage of a diode depends on the extent of doping.

    10. A.
    True
    B.
    False

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  10. Measurement of Hall coefficient enables the determination of

    11. A.
    mobility of charge carriers
    B.
    type of the conductivity and concentration of charge carriers
    C.
    temperature coefficient and thermal conductivity
    D.
    fermi level and forbidden energy gap

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