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ECE :: Electronic Devices and Circuits

  1. In the BJT amplifier shown in the figure is the transistor is biased in the forward active region. Putting a capacitor across RE will

  2. A.
    decrease the voltage gain and decrease the I/P impedance
    B.
    increase the voltage gain and decrease the I/P Impedance
    C.
    decrease the voltage gain and Increase the I/P impedance
    D.
    none of the above

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  3. In a centre tap full wave rectifier, 50 V is the peak voltage between the centre tap and one of the ends of the secondary. The maximum voltage across the reverse biased diode will be

  4. A.
    100 V
    B.
    72 V
    C.
    50 V
    D.
    38 V

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  5. Consider the following statements.
    The functions of an oxide layer in an IC device is to

    1. mask against diffusion or ion implant
    2. insulate the surface electrically
    3. increase the melting point of silicon
    4. produce a chemically stable protective layer of these statements.

  6. A.
    1, 2, 3
    B.
    1, 3, 4
    C.
    2, 3, 4
    D.
    1, 2, 4

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  7. The forbidden energy gap for germanium is

  8. A.
    0.12 eV
    B.
    0.32 eV
    C.
    0.72 eV
    D.
    0.92 eV

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  9. If the gate of JFET is reverse biased, the width of depletion region

  10. A.
    becomes zero
    B.
    is uniform
    C.
    is more near the source
    D.
    is more near the drain

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  11. If the atomic number of germanium is 32, the number of electrons in the outer most shell will be

  12. A.
    2
    B.
    3
    C.
    4
    D.
    6

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  13. Dielectric loss due to polarisation occurs in

  14. A.
    bipolar dielectrics
    B.
    non-metallic dielectrics
    C.
    liquid dielectrics
    D.
    all of the above

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  15. A metal loses electrons at room temperature.

  16. A.
    True
    B.
    False

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  17. Figure shows small signal common base transistor circuit.The current source I and resistor R on the output side are

  18. A.
    ie and re
    B.
    ie and (1 - a)re
    C.
    (1 - a)ie and (1 - a)re
    D.
    a ie and re

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  19. Consider the following statement associated with bipolar junction transistor and JFET

    1. The former has higher input impedance than the later
    2. The former has higher frequency stability than the later
    3. The later has lower noise figure than the former
    4. The later has higher power rating than the former.
    Of these statements

  20. A.
    1 and 2 are correct
    B.
    2 and 3 are correct
    C.
    3 and 4 are correct
    D.
    1 and 4 are correct

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