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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. For a UJT if
    R1 = Resistor from emitter to the base 1
    R2 = Resistor from emitter to the base 2 and RBB = R1 + R2, then the intrinsic stand off ratio (η) is

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  2. The kinetic energy of free electrons in a metal is (where k is de-Broglie wave number of the electrons)

    3. A.
    ∝
    B.
    ∝
    C.
    μk
    D.
    μk2

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  3. Intrinsic concentration of charge carriers in a semiconductor varies as

    4. A.
    T
    B.
    T2
    C.
    T3
    D.
    T-2

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  4. The dynamic resistance of a forward biased p-n diode

    5. A.
    varies inversely with current
    B.
    varies directly with current
    C.
    is constant
    D.
    is either constant or varies directly with current

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  5. A thermistor is a

    6. A.
    thermocouple
    B.
    thermometer
    C.
    miniature resistance
    D.
    heat sensitive explosive

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  6. When diodes are connected in series to increase voltage rating the peak inverse voltage per junction

    7. A.
    should not exceed half the breakdown voltage
    B.
    should not exceed the breakdown voltage
    C.
    should not exceed one third the breakdown voltage
    D.
    may be equal to or less than breakdown voltage

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  7. Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is

    8. A.
    normal to both current and magnetic field
    B.
    in the direction of current
    C.
    antiparallel to magnetic field
    D.
    in arbitrary direction

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  8. In an ideal diode there is no breakdown, no __________ current, and no forward __________ drop.

    9. A.
    reverse, voltage
    B.
    forward, current
    C.
    forward, voltage
    D.
    reverse, current

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  9. Silicon is not suitable for fabrication of light emitting diodes because it is

    10. A.
    an indirect band gap semiconductor
    B.
    direct band gap semiconductor
    C.
    wideband gap semiconductor
    D.
    narrowband gap semiconductor

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  10. MOSFET can be used as a

    11. A.
    current controlled capacitor
    B.
    voltage controlled capacitor
    C.
    current controlled inductor
    D.
    voltage controlled inductor

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