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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. Power diodes are generally

    2. A.
    silicon diodes
    B.
    germanium diodes
    C.
    either of the above
    D.
    none of the above

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  2. The inductance of a single layer solenoid of 10 turns is 5 μH. Which one of the following is the correct value of inductance when the number of turns is 20 and the length is doubled.

    3. A.
    10 μH
    B.
    20 μH
    C.
    40 μH
    D.
    5 μH

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  3. The depletion layer width of Junction

    4. A.
    decreases with light doping
    B.
    is independent of applied voltage
    C.
    is increased under reverse bias
    D.
    increases with heavy doping

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  4. Forbidden energy gap in germanium at 0 K is about

    5. A.
    10 eV
    B.
    5 eV
    C.
    2 eV
    D.
    0.78 eV

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  5. Light dependent resistors are

    6. A.
    highly doped semiconductor
    B.
    intrinsic semiconductor
    C.
    lightly doped semiconductor
    D.
    either (a) or (c)

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  6. Fermi level is the amount of energy in which

    7. A.
    a hole can have at room temperature
    B.
    an electron can have at room temperature
    C.
    must be given to an electron move to conduction band
    D.
    none of the above

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  7. When avalanche breakdown occurs covalent bonds are not affected.

    8. A.
    True
    B.
    False

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  8. In p channel JFET, VGS is positive.

    9. A.
    True
    B.
    False

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  9. Human body cannot sustain electric current beyond

    10. A.
    1 μA
    B.
    10 μA
    C.
    5 μA
    D.
    35 μA

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  10. To produce p type semiconductor we add

    11. A.
    acceptor atoms
    B.
    donor atoms
    C.
    pentavalent impurity
    D.
    trivalent impurity

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