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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. The term efficacy, is defined by

    2. A.
    same as efficiency
    B.
    measure of the ability of a device to produce a desired effect
    C.
    input/output
    D.
    (efficiency)2

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  2. The addition of p type impurity to intrinsic material creates allowable energy levels.

    3. A.
    slightly below conduction band
    B.
    slightly above conduction band
    C.
    slightly below valence band
    D.
    slightly above valence band

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  3. An ideal Op-amp is an ideal

    4. A.
    voltage controlled current source
    B.
    voltage controlled voltage source
    C.
    current controlled current source
    D.
    current controlled voltage source

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  4. Free electrons exist in

    5. A.
    first band
    B.
    second band
    C.
    third band
    D.
    conduction band

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  5. Resistivity of copper is nearly

    6. A.
    1.56 μ ohm-cm
    B.
    3.95 μ ohm-cm
    C.
    14.55 μ ohm-cm
    D.
    22.05 μ ohm-cm

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  6. As compared to bipolar junction transistor, a FET

    7. A.
    is less noisy
    B.
    has better thermal stability
    C.
    has higher input resistance
    D.
    all of the above

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  7. For a P-N diode, the number of minority carriers crossing the junction depends on

    8. A.
    forward bias voltage
    B.
    potential barrier
    C.
    rate of thermal generation of electron hole pairs
    D.
    none of the above

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  8. Ripple factor is

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  9. Figure represents a

    10. A.
    LED
    B.
    Varistor
    C.
    SCR
    D.
    Diac

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